Характеристики
PBSS9110T, Биполярный транзистор, PNP, 100 В, 300 мВт, 1 А The PBSS9110T is a 1A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• Higher efficiency leading to less heat generation
• NPN complement is PBSS8110T
• U7 Marking code
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы