Характеристики
PBSS5350T, Биполярный транзистор, PNP, 50 В, 300 мВт, 3 А The PBSS5350T is a 3A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation
• NPN complement is PBSS4350T
• ZD Marking code
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы