Характеристики
PBSS5220T, Биполярный транзистор, PNP, 20 В, 300 мВт, 2 А The PBSS5220T is a 2A PNP breakthrough-in small signal (BISS) Transistor in a plastic package offering ultra-low VCEsat and RCEsat parameters.
• Low collector-emitter saturation voltage VCEsat
• High collector current capabilities of IC and ICM
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements
• 3F Marking code
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы