Характеристики
PBSS5160T, Биполярный транзистор, PNP, 60 В, 220 МГц The PBSS5160T is a 1A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package.
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency due to less heat generation
• Reduces printed-circuit board (PCB) area required
• NPN complement is PBSS4160T
• U6 Marking code
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы