Характеристики
PBSS5130T, Биполярный транзистор, PNP, 30 В, 200 МГц Low Saturation Voltage PNP Transistors, Nexperia
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы