Характеристики
NJT4030PT1G, Биполярный транзистор, AEC-Q101, PNP, -40 В The NJT4030PT1G is a 3A bipolar PNP Power Transistor ideal device for high speed switching applications where power saving is a concern. It is the combination of low saturation voltage and high gain.
• Low collector-emitter saturation voltage
• High DC current gain
• High current-gain bandwidth product
• Halogen-free
• Minimized power loss
• Very low current requirements
• Ideal for high frequency designs
• AEC-Q101 qualified and PPAP capable
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы