NDT3055L, МОП-транзистор, N Канал, 4 А, 60 В, 7 мОм, 10 В, 1.6 В

Характеристики

NDT3055L, МОП-транзистор, N Канал, 4 А, 60 В, 7 мОм, 10 В, 1.6 ВThe NDT3055L is a N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC converters, PWM motor controls and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.

• High density cell design for extremely low RDS (ON)
• High power and current handling capability
• Low drive requirements allowing operation directly from logic drivers

Полупроводники — ДискретныеТранзисторыМОП-транзисторы