Характеристики
MJD45H11T4, Биполярный транзистор, PNP, -80 В, 20 Вт, -8 А The MJD45H11T4 is a PNP complementary Power Transistor manufactured using low voltage Multi Epitaxial Planar technology. It is intended for general-purpose linear and switching applications.
• Low collector-emitter saturation voltage
• Fast switching speed
• Surface-mount power package
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы