Характеристики
MJD350T4, Биполярный транзистор, PNP, 300 В, 15 Вт, -500 мА The MJD350T4 is a NPN-PNP complementary silicon Power Transistor manufactured using medium voltage Epitaxial Planar technology, resulting in a rugged high performance transistor.
• Surface-mount power package
• Electrical similar to MJE340 and MJE350
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы