LM5110-1M/NOPB, Микросхема

Характеристики

LM5110-1M/NOPB, МикросхемаThe LM5110-1M/NOPB is a dual 5A compound Gate Driver with negative output voltage capability. Each «compound» output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide negative drive capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground. The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. The ability to hold MOSFET gates off with a negative VGS voltage reduces losses when driving low threshold voltage MOSFETs often used as synchronous rectifiers. Under-voltage lockout protection and a shutdown input pin are also provided.

• Independently drives two N-channel MOSFETs
• Compound CMOS and bipolar outputs reduce output current variation
• Available in dual non-inverting, dual inverting and combination configurations
• Shutdown input provides low power mode
• Supply rail under-voltage lockout protection
• Pin-out compatible with industry standard gate drivers
• Two channels can be connected in parallel to double the drive current
• Independent inputs (TTL compatible)
• 25ns Typical fast propagation times
• Green product and no Sb/Br