Характеристики
IRG4BC40UPBFThe IRG4BC40UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
• Optimized for specific application conditions
• Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Корпус: TO-220AB, инфо: Биполярный транзистор IGBT, 600 В, 40 А, 160 Вт