Характеристики
IRF9610PBF, Транзистор, P-канал 200В 1.8А [TO-220AB]The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
• Dynamic dV/dt rating
• Fast switching
• 150 C Operating temperature
• Easy to parallel
• Simple drive requirement