Характеристики
IRF5803TRPBF, Pкан -40В -3.4А TSOP6/Micro6The IRF5803TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It is ideal for applications where printed circuit board space is at a premium. It’s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%. It is ideal for DC switches and load switch.
• Low gate charge
• Halogen-free
Транзисторы полевые импортные