Характеристики
FDPF39N20The FDPF39N20 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
• 100% Avalanche tested
• 38nC Typical low gate charge
• 57pF Typical low Crss
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: TO-220F, инфо: Полевой транзистор, N-канальный, 200В 39А 0066 Ом, 37W