Микросхема DS1225Y-150+, NV SRAM 64Кбит

Характеристики

DS1225Y-150+, NV SRAM 64КбитThe DS1225Y-150+ is a 64K non volatile SRAM in 28 pin DIP package. It is a 65536bit fully static nonvolatile RAM organized as 8192 words by 8 bits. Each NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The non volatile SRAM can be used in place of existing 8K x 8 SRAMs directly conforming to popular byte wide 28 pin DIP standard. The DS1225Y also matches pin-out of 2764 EPROM or 2864 EEPROM allowing direct substitution while enhancing performance. There is no limit on number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Directly replaces 2K x 8 volatile static RAM or EEPROM
• Unlimited write cycles
• Low power CMOS
• Read and write access time of 150ns
• Full ±10% operating range
• Power supply voltage range from 4.5V to 5.5V
• Operating temperature range from 0°C to 70°C