Характеристики
BSH105,215The BSH105.215 is a N-channel enhancement mode Field-Effect Transistor in a plastic package using vertical D-MOS technology. Suitable for high frequency applications due to fast switching characteristics.
• Logic-level compatible
• Very fast switching
• Low threshold voltage
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: SOT-23 (TO-236AB), инфо: Полевой транзистор, N-канальный, 20 В, 1.05 А