Характеристики
BDX33C, Биполярный транзистор, дарлингтона, NPN, 100 В The BDX33C is a 100V NPN Darlington Transistor having monolithic construction with built-in base-emitter shunt resistor.
• Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum)
• Collector-base voltage(Vcbo = 100V)
• Emitter-base voltage(Vebo = 5V)
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Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы