Микросхема 93LC46B-I/SN, Последовательная энергонезависимая память [SO-8]

Характеристики

93LC46B-I/SN, Последовательная энергонезависимая память [SO-8]The 93LC46B-I/SN is a 1kB MICROWIRE compatible serial Electrically Erasable Programmable Read-Only Memory (EEPROM) with word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent upon external logic levels driving the ORG pin to set word size. The 93C46B device provides dedicated 16-bit communication. Advanced CMOS technology makes this device ideal for low-power, nonvolatile memory applications.

• Low-power CMOS technology
• Self-timed erase/write cycles
• Automatic erase all (ERAL) before write all (WRAL)
• Power ON/OFF data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal
• Sequential read function
• 1000000 Erase/write cycles
• Data retention >200 years