Характеристики
2STR1215The 2STR1215 is a NPN fast-switching Power Transistor manufactured using new «PB-HCD» (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast switching speed
• Surface-mount device in medium power package