Микросхема 24LC515-I/SM, Последовательная энергонезависимая память [SO-8]

Характеристики

24LC515-I/SM, Последовательная энергонезависимая память [SO-8]The 24LC515-I/SM is a 512kB I²C serial Electrically Erasable Programmable Read-Only Memory (EEPROM) capable of operation across a broad voltage range 1.7 to 5.5V. It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device has both byte write and page write capability of up to 64 bytes of data. This device is capable of both random and sequential reads. Reads may be sequential within address boundaries 0000h to 7FFFh and 8000h to FFFFh. Functional address lines allow up to four devices on the same data bus. This allows for up to 2Mb total system EEPROM memory.

• Single supply with operation down to 2.5V
• Low-power CMOS technology
• 2-wire serial interface (I²C™ compatible)
• Cascadable up to four devices
• Schmitt trigger inputs for noise suppression
• Output slope control to eliminate ground bounce
• 100 and 400kHz Clock compatibility
• Page write time 5ms maximum
• Self-timed erase/write cycle
• 64-byte page write buffer
• Hardware write-protect
• ESD protection >4000V
• More than 1million erase/write cycles
• Data retention >200 years