Характеристики
MJ10021, Биполярный транзистор, дарлингтона, NPN, 250 В The MJ10021 is a 250V NPN silicon Darlington Transistor designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. This device is particularly suited for line operated switch mode applications.
• Base-emitter speedup diode
• 8V Emitter to base voltage (VEBO)
• 0.7 C/W Thermal resistance, junction to case
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Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы