Характеристики
BC109C, Биполярный транзистор, малошумящий, NPN, 25 В The BC109C from Multicomp are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
• Collector emitter voltage (Vce) of 25V
• Continuous collector current (Ic) of 200mA
• Power dissipation of 600mW
• Operating junction temperature range from -65 C to 200 C
• Collector emitter saturation voltage of 600mV at Ic=100mA
• DC current gain of 40 at Ic=10µA
• Multicomp products are rated 4.6 out of 5 stars
• 12-month limited warranty *view Terms & Conditions for details
• 96% of customers would recommend to a friend
Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы