Характеристики
IRFR014PBFThe IRFR014PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
• Dynamic dV/dt rating
• Ease of paralleling
• Surface-mount
• Simple drive requirements
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: D-Pak, инфо: Полевой транзистор, N-канальный, 60 В, 7.7 А, 25 Вт, 0.2 Ом