Транзистор IRF7413TRPBF

Характеристики

IRF7413TRPBFThe IRF7413TRPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the ruggedized device design, provides an extremely efficient and reliable operation for use in battery and load management application. The IRF7413PBF is a fifth generation single N-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

• Generation V technology
• Ultra-low ON-resistance
• Dynamic dV/dt rating
• Fast switching
• 100% Rg tested
• Low switching losses
• Low conduction losses

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Корпус: 8-SO, инфо: Полевой транзистор, N-канальный, 30 В, 13 А, 2.5 Вт