Характеристики
FDS9958The FDS9958 is a PowerTrench® dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for portable electronics applications like load switching and power management, battery charging and protection circuits.
• ±20V Gate to source voltage
• -2.9A Continuous drain current
• -12A Pulsed drain current
Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Корпус: 8-SO, инфо: Сборка из полевых транзисторов, 2P-канальный, 60 В, 2.9 А, 2 Вт