Характеристики
FDS8978The FDS8978 is a dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
• Low gate charge
• High performance Trench technology for extremely low RDS (ON)
• ±20V Gate to source voltage
• 7.5A Continuous drain current
• 49A Pulsed drain current
Транзисторы / Полевые транзисторы / Сборки MOSFET транзисторов
Корпус: 8-SO, инфо: Сборка из полевых транзисторов, 2N-канальный, 30 В, 7.5 А, 1.6 Вт