Характеристики
IRLR2908PBF, Nкан 80В 39А D-PakThe IRLR2908PBF is a 80V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 C junction operating temperature, low R?JC, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
• Advanced process technology
• Ultra low on-resistance
• Dynamic dV/dt rating
• Repetitive avalanche allowed up to Tjmax
• 175 C Operating temperature