Характеристики
AUIRLR3636, Auto Q101 Nкан 60В 99А DPakThe AUIRLR3636 is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
• Advanced process technology
• Logic level gate drive
• Repetitive avalanche allowed up to Tjmax