FDS6675BZ, МОП-транзистор, P Канал, 11 А, -30 В, 0.0108 Ом

Характеристики

FDS6675BZ, МОП-транзистор, P Канал, 11 А, -30 В, 0.0108 Ом The FDS6675BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating — MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.

• Extended VGSS range (-25V) for battery applications
• HBM ESD protection level of ±5.4kV typical
• High performance trench technology for extremely low RDS (on)
• High power and current handling capability